Stressed semiconductor device and method of manufacturing
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United States of America Patent
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Jun 4, 2013
Grant Date -
Nov 22, 2012
app pub date -
May 19, 2011
filing date -
May 19, 2011
priority date (Note) -
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Abstract
A semiconductor device and method of manufacturing a semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate and forming a dielectric layer over the substrate. The method further includes forming a first trench within the dielectric layer, wherein the first trench extends through the dielectric layer and epitaxially (epi) growing a first active layer within the first trench and selectively curing with a radiation energy the dielectric layer adjacent to the first active layer.
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