Light emitting device using GaN LED chip
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United States of America Patent
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Jun 4, 2013
Grant Date -
Jul 12, 2012
app pub date -
Mar 13, 2012
filing date -
Oct 5, 2006
priority date (Note) -
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Abstract
A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.
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