Formation of III-V based devices on semiconductor substrates
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United States of America Patent
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Jun 4, 2013
Grant Date -
Jan 5, 2012
app pub date -
Jun 30, 2010
filing date -
Jun 30, 2010
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Abstract
A device includes a semiconductor substrate, and insulation regions in the semiconductor substrate. Opposite sidewalls of the insulation regions have a spacing between about 70 nm and about 300 nm. A III-V compound semiconductor region is formed between the opposite sidewalls of the insulation regions.
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