Spacer elements for semiconductor device
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United States of America Patent
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Jun 4, 2013
Grant Date -
May 24, 2012
app pub date -
Nov 22, 2010
filing date -
Nov 22, 2010
priority date (Note) -
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Abstract
The present disclosure describes a semiconductor device including a semiconductor substrate and a gate stack disposed on the semiconductor substrate. A first spacer element is disposed on the substrate abutting the first gate stack. In an embodiment, the first spacer element includes silicon nitride. A second spacer element is adjacent the first spacer element. In an embodiment, the second spacer element includes silicon oxide. A raised source and a first raised drain is provided laterally contacting sidewalls of the second spacer element. In an embodiment, a contact directly interfaces with the second spacer element.
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