Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions
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United States of America Patent
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Jun 4, 2013
Grant Date -
Jun 2, 2011
app pub date -
Nov 30, 2009
filing date -
Nov 30, 2009
priority date (Note) -
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Abstract
An electronic device manufacturing process includes depositing a bottom electrode layer. Then an electronic device is fabricated on the bottom electrode layer. Patterning of the bottom electrode layer is performed after fabricating the electronic device and in a separate process from patterning a top electrode. A first dielectric layer is then deposited on the electronic device and the bottom electrode layer followed by a top electrode layer. The top electrode is then patterned in a separate process from the bottom electrode. Separately patterning the top and bottom electrodes improves yields by reducing voids in the dielectric material between electronic devices. One electronic device the manufacturing process is well-suited for is magnetic tunnel junctions (MTJs).
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