Semiconductor structure having an air-gap region and a method of manufacturing the same
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United States of America Patent
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Jun 4, 2013
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app pub date -
Feb 18, 2010
filing date -
Feb 18, 2010
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Abstract
A semiconductor structure includes a first metal-containing layer, a dielectric capping layer, a second metal-containing layer, and a conductive pad. The first metal-containing layer includes a set of metal structures, a dielectric filler disposed to occupy a portion of the first metal-containing layer, and an air-gap region defined by at least the set of metal structures and the dielectric filler and abutting at least a portion of the set of metal structures. The second metal-containing layer includes at least a via plug electrically connected to a portion of the set of metal structures. The conductive pad and the via plug do not overlap the air-gap region.
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