Material and method for photolithography
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United States of America Patent
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Jun 11, 2013
Grant Date -
Jan 12, 2012
app pub date -
Sep 21, 2011
filing date -
May 14, 2007
priority date (Note) -
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Abstract
A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.
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