Capacitive MEMS switch and method of fabricating the same

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United States of America Patent

PATENT NO 8460962
APP PUB NO 20100314669A1
SERIAL NO

12813832

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention discloses a capacitive MEMS switch on top of a semiconductor substrate containing a CMOS driving circuitry. The capacitive MEMS switch disclosed includes: 1) a semiconductor substrate containing a driving circuitry inside, and first and second conductors as well as a bottom electrode on top; 2) a suspended composite beam above and anchored onto the semiconductor substrate, containing a top electrode aligned to the bottom electrode with a first vertical distance, a top conductor, capped by a dielectric layer, having a first and second contact tips aligned with the first and second bottom conductors with a second vertical distance differentially smaller than the first vertical distance. The electrostatic attraction generated between the top electrode and the bottom electrode pulls the first and second contact tips in physical contact with and electrically connects the first and second bottom conductors through the top conductor.

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Patent Owner(s)

Patent OwnerAddress
XI'AN YISHEN OPTOELECTRONICS TECHNOLOGY CO LTDSUITE 204 YUANHU BUILDING NO 60 GREAT WESTERN ROAD HIGH TECH NEW INDUSTRIAL PARK HIGH TECH AREA XI'AN 710119

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Herb He Shanghai, CN 76 343

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