Compound semiconductor lamination, method for manufacturing the same, and semiconductor device
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United States of America Patent
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Jun 11, 2013
Grant Date -
Apr 15, 2010
app pub date -
Mar 21, 2008
filing date -
Mar 23, 2007
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Abstract
The present invention relates to a compound semiconductor lamination that enables an InSb film to be formed on an Si substrate and enables development of applications to magnetic sensors, such as Hall elements, magneto-resistance elements, etc., optical devices, such as infrared sensors, etc., and electronic devices, such as transistors, etc., to be provided industrially, and a method for manufacturing the compound semiconductor lamination. An active layer, which is a compound semiconductor that does not contain As, is directly formed on an Si substrate. As is present at an interface of the active layer and a single crystal layer of the Si substrate. The compound semiconductor contains at least nitrogen. The compound semiconductor is a single crystal thin film. The Si substrate is a bulk single crystal substrate or a thin film substrate with an uppermost layer being Si.
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