Method and apparatus of forming bipolar transistor device
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United States of America Patent
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Jun 11, 2013
Grant Date -
Sep 15, 2011
app pub date -
Mar 9, 2010
filing date -
Mar 9, 2010
priority date (Note) -
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Abstract
The present disclosure provides a semiconductor device having a transistor. The transistor includes a substrate. The transistor includes a collector region that is formed in a portion of the substrate. The transistor includes a base region that is surrounded by the collector region. The transistor includes an emitter region that is surrounded by the based region. The transistor includes an isolation structure that is disposed adjacent the emitter region. The transistor includes a gate structure that is disposed over a portion of the emitter region and a portion of the isolation structure.
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