Semiconductor device having multi-thickness gate dielectric
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United States of America Patent
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Jun 11, 2013
Grant Date -
Sep 15, 2011
app pub date -
Mar 10, 2010
filing date -
Mar 10, 2010
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Abstract
A semiconductor device is provided that, in an embodiment, is in the form of a high voltage MOS (HVMOS) device. The device includes a semiconductor substrate and a gate structure formed on the semiconductor substrate. The gate structure includes a gate dielectric which has a first portion with a first thickness and a second portion with a second thickness. The second thickness is greater than the first thickness. A gate electrode is disposed on the first and second portion. In an embodiment, a drift region underlies the second portion of the gate dielectric. A method of fabricating the same is also provided.
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