Spacer shape engineering for void-free gap-filling process
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United States of America Patent
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Jun 11, 2013
Grant Date -
Feb 2, 2012
app pub date -
Oct 11, 2011
filing date -
Jul 24, 2008
priority date (Note) -
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Abstract
A method of forming a semiconductor device includes providing a semiconductor substrate; forming a gate stack on the semiconductor substrate; forming a gate spacer adjacent to a sidewall of the gate stack; thinning the gate spacer; and forming a secondary gate spacer on a sidewall of the gate spacer after the step of thinning the gate spacer.
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