Spin transport device
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United States of America Patent
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Jun 11, 2013
Grant Date -
Jul 19, 2012
app pub date -
Jan 17, 2012
filing date -
Jan 19, 2011
priority date (Note) -
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Abstract
The spin transport device includes a semiconductor layer; a first ferromagnetic layer provided on the semiconductor layer via a first tunnel barrier layer; a second ferromagnetic layer provided on the semiconductor layer via a second tunnel barrier layer so as to be divided from the first ferromagnetic layer; and a first wire which generates, upon application of an electric current, a magnetic field in a region between the first ferromagnetic layer and the second ferromagnetic layer in the semiconductor layer.
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