Memory module cutting off DM pad leakage current
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United States of America Patent
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Jun 11, 2013
Grant Date -
Jul 19, 2012
app pub date -
Mar 27, 2012
filing date -
Feb 10, 2009
priority date (Note) -
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Abstract
A memory module includes: an ODT circuit on a memory device and including pull-up and pull-down resistors connected between pull-up and pull-down transistors. A data masking (DM) pad is provided in a tap region of the module board. A current leakage monitoring unit is also provided and receives a ground state signal from the DM pad and a bit configuration signal from the memory device and disables the pull-up transistors to cut off a current path between the pull-up resistors of the ODT circuit and the DM pad during a ODT enable mode.
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