Method and apparatus to reset a phase change memory and switch (PCMS) memory cell
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United States of America Patent
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Jun 11, 2013
Grant Date -
Sep 27, 2012
app pub date -
Mar 21, 2011
filing date -
Mar 21, 2011
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Abstract
The present disclosure relates to the fabrication of non-volatile memory devices. In at least one embodiment, the non-volatile memory of the present disclosure may include a phase change memory and switch (hereinafter “PCMS”) memory cell and a process for resetting the PCMS memory utilizing a “look-up” table to calculate a current required to place a bit above a reference level to maximum threshold voltage.
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