Resistive memory element and use thereof
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United States of America Patent
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Jun 11, 2013
Grant Date -
Apr 19, 2012
app pub date -
Aug 18, 2011
filing date -
Feb 20, 2009
priority date (Note) -
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Abstract
A resistive memory element that includes an element body and at least a pair of electrodes opposed to each other with at least a portion of the element body interposed therebetween. The element body is made of an oxide semiconductor which has a composition represented by the general formula: (Ba1-xSrx)Ti1-yMyO3 (wherein M is at least one from among Mn, Fe, and Co; 0≦x≦1.0; and 0.005≦y≦0.05). The first electrode of the pair of electrodes is made of a material which can form a Schottky barrier which can develop a rectifying property and resistance change characteristics in an interface region between the first electrode and the element body. The second electrode is made of a material which provides a more ohmic junction to the element body as compared with the first electrode.
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