Thermally assisted multi-bit MRAM
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United States of America Patent
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Jun 11, 2013
Grant Date -
Sep 13, 2012
app pub date -
May 18, 2012
filing date -
Sep 30, 2008
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Abstract
Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.
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