Providing electron beam proximity effect correction by simulating write operations of polygonal shapes

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United States of America Patent

PATENT NO 8464186
APP PUB NO 20120192126A1
SERIAL NO

13011165

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method for writing a design to a material using an electron beam includes assigning a first dosage to a first polygonal shape. The first polygonal shape occupies a first virtual layer and includes a first set of pixels. The method also includes simulating a first write operation using the first polygonal shape to create the design, discerning an error in the simulated first write operation, and assigning a second dosage to a second polygonal shape to reduce the error. The second polygonal shape occupies a second virtual layer. The method further includes creating a data structure that includes the first and second polygonal shapes and saving the data structure to a non-transitory computer-readable medium.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jeng-Horng Hsin-Chu, TW 137 3250
Chiang, Chia-Ping Taipei, TW 21 285
Huang, Wen-Chun Xi-Gang Xiang, TW 100 1779
Lin, Shy-Jay Jhudong Township, TW 142 982
Liu, Ru-Gun Hsinchu, TW 404 6961
Tsai, Cheng Kun Hsinchu, TW 16 365
Wang, Hung-Chun Ching-Suei, TW 36 880

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