Composition for wet etching of silicon dioxide
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United States of America Patent
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Jun 18, 2013
Grant Date -
Mar 22, 2012
app pub date -
Sep 21, 2010
filing date -
Sep 21, 2010
priority date (Note) -
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Abstract
Provided is an etching composition for electively removing silicon dioxide at a high etch rate, more particularly, a composition for wet etching of silicon dioxide, including 1 to 40 wt % of hydrogen fluoride (HF); 5 to 40 wt % of ammonium hydrogen fluoride (NH4HF2); and water, and further including a surfactant to improve selectivity of the silicon dioxide and a silicon nitride film. Since the composition for wet etching of silicon dioxide has the high etch selectivity of the silicon dioxide to the silicon nitride film, it is useful for selectively removing silicon dioxide.
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