Manufacturing method of semiconductor device

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United States of America Patent

PATENT NO 8474126
APP PUB NO 20110294265A1
SERIAL NO

13206042

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Abstract

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A manufacturing method of a semiconductor device include forming a capacitor by forming an oxide film on a surface of a valve metal based on anodic oxidization and by forming a conductive part made of a conductive material on the oxide film; adhering the capacitor on a semiconductor element mounted on a supporting substrate; and coupling the capacitor to the supporting substrate via an outside connection terminal.

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Patent Owner(s)

  • FUJITSU LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kurihara, Kazuaki Kawasaki, JP 168 1831
Shioga, Takeshi Kawasaki, JP 73 930

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