Silicon-germanium, quantum-well, light-emitting diode
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United States of America Patent
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Jul 2, 2013
Grant Date -
Jul 12, 2012
app pub date -
Sep 25, 2009
filing date -
Sep 25, 2009
priority date (Note) -
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Abstract
A silicon-germanium, quantum-well, light-emitting diode. The light-emitting diode includes a p-doped portion, a quantum-well portion, and an p-doped portion. The quantum-well portion is disposed between the p-doped portion and the n-doped portion. The quantum-well portion includes a carrier confinement region that is configured to facilitate luminescence with emission of light produced by direct recombination with a hole confined within the carrier confinement region. The p-doped portion includes a first alloy of silicon-germanium, and the n-doped portion includes a second alloy of silicon-germanium.
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