High density photodiodes
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United States of America Patent
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Jul 2, 2013
Grant Date -
Nov 17, 2011
app pub date -
May 18, 2011
filing date -
Sep 15, 2006
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Abstract
The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.
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