Method and apparatus for monitoring mask process impact on lithography performance
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United States of America Patent
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Jul 2, 2013
Grant Date -
Oct 6, 2011
app pub date -
Apr 1, 2010
filing date -
Apr 1, 2010
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Abstract
The present disclosure is directed generally to a method and apparatus for monitoring mask process impact on lithography performance. A method including receiving a physical wafer pattern according to a mask, extracting a mask contour from the mask, and extracting a deconvolution pattern based on the mask contour. A lithography process is simulated to create a virtual wafer pattern based on the deconvolution pattern. The virtual wafer pattern is then compared to the physical wafer pattern.
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