Method of forming semiconductor device having a capacitor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 9, 2013
Grant Date -
Sep 23, 2010
app pub date -
Mar 12, 2010
filing date -
Mar 18, 2009
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of forming a semiconductor device includes forming a lower electrode layer on a substrate, forming a surface oxide layer on the lower electrode layer, partially removing the lower electrode layer to form a lower electrode, removing the surface oxide layer to expose the lower electrode, forming a capacitor dielectric layer on the lower electrode, and forming an upper electrode on the capacitor dielectric layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully