Method of processing substrates
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United States of America Patent
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Jul 16, 2013
Grant Date -
Sep 25, 2008
app pub date -
Jul 12, 2006
filing date -
Aug 4, 2005
priority date (Note) -
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status (Latency Note)
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Abstract
This invention relates to a method of processing substrates including: (a) etching, in a chamber, a generally vertical structure in a substrate using a cyclic process including an etch step using a reactive etch gas and a deposition step for depositing a protective polymer on to the side walls of that part of the structure which has already been etched by a preceding etch step or steps; and (b) cleaning, in the absence of any substrate, the chamber of material deposited thereon by the performance of the deposition step in step (a) characterized in that following the cleaning of the deposition derived material, the chamber is cleaned of material derived from the etchant gas by exposing the chamber to a plasma containing a mixture of O2 and at least the active element of elements of the etchant gas.
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