Memory device incorporating a resistance variable chalcogenide element
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United States of America Patent
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Jul 16, 2013
Grant Date -
Nov 17, 2011
app pub date -
Jul 18, 2011
filing date -
Aug 12, 2004
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Abstract
A memory device comprising a first electrode, a second electrode, metal-chalcogenide material between the first and second electrodes and chalcogenide glass between the first and second electrodes. The chalcogenide glass comprises a material with the chemical formula AxB100-x, wherein A is a non-chalcogenide component and B is a chalcogenide component, and A has a bonding affinity for B relative to homopolar bonds of A. The memory device further comprises a conducting channel in the chalcogenide glass comprising bonds formed between A and a component of the metal chalcogenide material.
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