Tritium direct conversion semiconductor device
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United States of America Patent
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Jul 16, 2013
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N/A
app pub date -
Dec 14, 2009
filing date -
Dec 14, 2008
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Abstract
A multilayer device for producing electricity. The device comprising a betavoltaic source layer for generating beta particles, and at least three semiconductor layers each having a bandgap substantially similar to a band gap of the other layers, the at least three layers comprising a doped top layer, an undoped intermediate layer and a doped bottom layer, wherein the top and the bottom layers are doped with opposite-type dopants, and wherein the top layer is closer to the betavoltaic source layer than the bottom layer.
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