Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers

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United States of America Patent

PATENT NO 8497233
APP PUB NO 20120028871A1
SERIAL NO

13138468

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Abstract

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A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point >65° C., at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device.

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Patent Owner(s)

Patent OwnerAddress
AVANTOR PERFORMANCE MATERIALS LLC3477 CORPORATE PARKWAY SUITE 200 CENTER VALLEY PA 18034

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Westwood, Glenn Edison, US 7 74

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