Vertical diodes for non-volatile memory device
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United States of America Patent
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Aug 20, 2013
Grant Date -
May 30, 2013
app pub date -
Jan 23, 2013
filing date -
May 31, 2011
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Abstract
A steering device. The steering device includes an n-type impurity region comprising a zinc oxide material and a p-type impurity region comprising a silicon germanium material. A pn junction region formed from the zinc oxide material and the silicon germanium material. The steering device is a serially coupled to a resistive switching device to provide rectification for the resistive switching device to form a non-volatile memory device.
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