Method for manufacturing contact and semiconductor device having said contact
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United States of America Patent
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Aug 20, 2013
Grant Date -
Sep 6, 2012
app pub date -
Feb 27, 2011
filing date -
Jun 22, 2010
priority date (Note) -
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Abstract
The present invention relates to a method for manufacturing a contact and a semiconductor device having said contact. The present invention proposes to form first a trench contract of relatively large size, then to form one or more dielectric layer(s) within the trench contact, and then to remove the upper part of the dielectric layer(s) and to fill the same with a conductive material. The use of such a method makes it easy to form a trench contact of relatively large size which is easy for manufacturing; besides, since dielectric layer(s) is/are formed in the trench contact, thence capacitance between a source/drain trench contact and a gate electrode is reduced accordingly.
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