Avalanche photodiode having controlled breakdown voltage
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United States of America Patent
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Aug 20, 2013
Grant Date -
May 31, 2012
app pub date -
Feb 2, 2012
filing date -
Mar 7, 2007
priority date (Note) -
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Abstract
Avalanche photodiodes and methods for forming them are disclosed. The breakdown voltage of an avalanche photodiode is controlled through the inclusion of a diffusion sink that is formed at the same time as the device region of the photodiode. The device region and diffusion sink are formed by diffusing a dopant into a semiconductor to form a p-n junction in the device region. The dopant is diffused through a first diffusion window to form the device region and a second diffusion window to form the diffusion sink. The depth of the p-n junction is based on an attribute of the second diffusion window.
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