BAW structure with reduced topographic steps and related method
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United States of America Patent
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Aug 20, 2013
Grant Date -
Sep 16, 2010
app pub date -
Sep 12, 2008
filing date -
Oct 18, 2007
priority date (Note) -
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Abstract
According to one embodiment, a method of forming a segment of a layer of material, where the segment of the layer of material has at least one tapered sidewall, is disclosed, where the method includes forming a mask over the layer of material. The method includes etching the mask and the layer of material in an etch process by controlling an etch rate of the mask and an etch rate of the layer of material so as to form the segment of the layer of material with the at least one tapered sidewall. A first etch chemistry is used to etch the mask and a second etch chemistry is used to etch the layer of material. The etch rates of the mask and the layer of material can be controlled by controlling a ratio of the first and second etch chemistries. The method can be utilized to fabricate BAW structures.
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