Doped low-temperature phase barium metaborate single crystal, the manufacturing method thereof and wave changing elements therefrom

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United States of America Patent

PATENT NO 8514483
APP PUB NO 20110170174A1
SERIAL NO

13055721

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The present invention relates generally to the field of synthetic crystal, and more particularly, this invention relates to doped low-temperature phase barium metaborate single crystal, growth method and frequency-converter. Molten salt method was adopted. The single crystal completely overcome the shortcomings of BBO with strong deliquescence, almost no deliquescence; its frequency doubling effect and optical damage threshold has improved greatly compared with the BBO; its hardness increased significantly, the single crystal with Shore hardness of 101.3 and Mohs hardness of 6, however, BBO with Shore hardness of 71.2 and Mohs hardness of 4. From the UV-Vis region transmittance curves tests, the cut-off wavelength of the single crystal is 190 nm, wavelength of absorption onset is 205 nm. BBSAG is widely applied in the fields of laser and nonlinear optics, and in terms of frequency-converter of ultraviolet and deep-ultraviolet due to its excellent properties better than BBO.

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Patent Owner(s)

Patent OwnerAddress
FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER CHINESE ACADEMY OF SCIENCESNO 155 YANGQIAO WEST ROAD GULOU DISTRICT FUZHOU CITY FUJIAN PROVINCE FUZHOU CITY FUJIAN PROVINCE 350002

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cai, Shicong Fujian, CN 2 6
Chen, Changzhang Fujian, CN 2 6
Hong, Maochun Fujian, CN 7 6
Li, Ding Fujian, CN 66 214
Lin, Hainan Fujian, CN 2 6

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