Plasma etching method capable of detecting end point and plasma etching device therefor
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United States of America Patent
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Aug 27, 2013
Grant Date -
Nov 12, 2009
app pub date -
Jul 27, 2007
filing date -
Jul 28, 2006
priority date (Note) -
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Abstract
The present invention relates to a plasma etching method in which a special area for detecting an end point needs not to be set and an equipment therefor. At an etching step of forming SF6 gas into plasma to etch an etching ground on a Si film, the step is configured by two steps of: a large-amount supply step of supplying a large amount of SF6 gas; and a small-amount supply step of supplying a small amount of SF6 gas. An end-point detecting processor 34 measures an emission intensity of Si or SiFx in the plasma at the small-amount supply step, and determines that an etching end point is reached when the measured emission intensity becomes equal to or less than a previously set reference value.
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