Method for fabricating photomask

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United States of America Patent

PATENT NO 8518610
APP PUB NO 20090004574A1
SERIAL NO

11955332

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Abstract

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Provided is a method for fabricating a photomask. The method includes the following processes. Light blocking patterns are formed on a mask substrate, and surface properties of the mask substrate on which the light blocking patterns are formed are changed into hydrophobicity. When the surface properties of the mask substrate are changed into the hydrophobicity, the mask substrate is treated using plasma gas. The plasma gas may be a gas mixture of trifluoromethane (CHF3), tetrafluoromethane (CF4), and hydrogen (H2).

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Patent Owner(s)

  • HYNIX SEMICONDUCTOR INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Jun Sik Cheongju-si, KR 11 38

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