SEQUENTIAL PROGRAMMING OF SETS OF NON-VOLATILE ELEMENTS TO IMPROVE BOOST VOLTAGE CLAMPING

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United States of America Patent

APP PUB NO 20130223154A1
SERIAL NO

13860141

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Abstract

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A non-volatile storage system reduces program disturb in a set of non-volatile storage elements by programming using selected bit line patterns which increase the clamped boosting potential of an inhibited channel to avoid program disturb. First, second and third sets of non-volatile storage elements are programmed in separate sequences, one after another, so that all program-verify operations occur for the first set, then for the second set, and then for the third set. Each non-volatile storage element in a set is separated from the next closest non-volatile storage element in the set at least two other non-volatile storage elements in the set.

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SANDISK TECHNOLOGIES LLC5080 SPECTRUM DRIVE SUITE 1050W ADDISON TX 75001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dutta, Deepanshu Santa Clara, US 193 2117
Lutze, Jeffrey W San Jose, US 96 3623

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