Manufacturing method of metal oxide semiconductor material for gas sensor
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United States of America Patent
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Sep 10, 2013
Grant Date -
May 10, 2012
app pub date -
Aug 28, 2009
filing date -
Aug 29, 2008
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Abstract
Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis step 1 of synthesizing an oxide precursor solution in which an oxide precursor is dispersed, a pH adjustment step 3 of adjusting the pH of the oxide precursor solution, a precursor-colloid dispersion preparation step 5 of preparing an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed substantially uniformly, a purifying step 7 of purifying the oxide precursor-noble metal colloid dispersion to obtain a purified oxide precursor noble metal colloid dispersion, and a freeze-drying step 11 of freeze-drying an precipitate of the purified oxide precursor-noble metal colloid dispersion.
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