Method of manufacturing trench MOSFET structures using three masks process
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United States of America Patent
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Sep 10, 2013
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app pub date -
Sep 29, 2011
filing date -
Jul 8, 2009
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Abstract
In according with the present invention, a semiconductor device is formed as follows. A contact insulation layer is deposited on the top surface of said silicon layer. A contact mask is applied and following with a dry oxide etching to remove the contact insulation layer from contact open areas. The silicon layer is implanted with a source dopant through the contact open areas and the source dopant is diffused to form source regions, thereby a source mask is saved. A dry silicon etch is carried out to form trenched source-body contacts in the contact open areas, penetrating through the source regions and extending into the body regions.
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