Capacitor structure in a semiconductor device
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United States of America Patent
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Sep 17, 2013
Grant Date -
N/A
app pub date -
Jul 27, 2011
filing date -
Jun 16, 2004
priority date (Note) -
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Abstract
An on-chip capacitor includes a first layer first polarity conducting strip and a first layer second polarity conducting strip, wherein the first layer second polarity conducting strip is arranged adjacent to and spaced apart from the first layer first polarity conducting strip, a second layer first polarity conducting strip and a second layer second polarity conducting strip, wherein the second layer second polarity conducting strip is arranged adjacent to and spaced apart from the second layer first polarity conducting strip, wherein the second layer second polarity conducting strip is arranged overlying the first layer second polarity conducting strip, wherein the second layer first polarity conducting strip is arranged overlying the first layer first polarity conducting strip; wherein the first layer first-polarity conducting strip electrically couples with the second layer first polarity conducting strip; and wherein the first-layer second polarity conducting strip electrically couples with the second layer second-polarity conducting strip.
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