Method, apparatus and program for manufacturing silicon structure
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United States of America Patent
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Oct 1, 2013
Grant Date -
Apr 28, 2011
app pub date -
Apr 8, 2009
filing date -
Jun 18, 2008
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Abstract
A method for manufacturing a silicon structure according to the present invention includes, in a so-called dry-etching process wherein gas-switching is employed, the steps of: etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the etch stop layer; subsequently etching under a transition etching condition in which an etching rate is decreased with time from the highest etching rate in the high-rate etching condition; and thereafter, etching the silicon region under a low-rate etching condition of a lowest etching rate in the transition etching condition.
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