Semiconductor device

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United States of America Patent

PATENT NO 8552529
APP PUB NO 20120241908A1
SERIAL NO

13488958

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Abstract

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A semiconductor device is disclosed. The device includes a substrate; a first metal layer overlying the substrate; a dielectric layer overlying the first metal layer; and a second metal layer overlying the dielectric layer, wherein the first metal layer comprises: a first body-centered cubic lattice metal layer; a first underlayer, underlying the first body-centered cubic lattice metal layer, wherein the first underlayer is metal of body-centered cubic lattice and includes titanium (Ti), tungsten (W), molybdenum (Mo) or niobium (Nb); and a first interface of body-centered cubic lattice between the first body-centered cubic lattice metal layer and the first underlayer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Kei-Wei Yonghe, TW 224 1026
Tsao, Jung-Chih Taipei, TW 51 408
Wang, Ying-Lang Longjing Township, Taichung County, TW 180 1220
Wang, Yu-Sheng Tainan, TW 76 417

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