Micro-scale power source

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United States of America Patent

PATENT NO 8552616
APP PUB NO 20090026879A1
SERIAL NO

12086219

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Abstract

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A micro-scale power source and method includes a semiconductor structure having an n-type semiconductor region, a p-type semiconductor region and a p-n junction. A radioisotope provides energy to the p-n junction resulting in electron-hole pairs being formed in the n-type semiconductor region and p-type semiconductor region, which causes electrical current to pass through p-n junction and produce electrical power.

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Patent Owner(s)

Patent OwnerAddress
CURATORS OF THE UNIVERSITY OF MISSOURI THEOFFICE OF TECHNOLOGY AND SPECIAL PROJECTS UNIVERSITY OF MISSOURI SYSTEM 475 MCREYNOLDS HALL COLUMBIA MO 65211-2015

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Prelas, Mark A Columbia, US 12 131

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