Chemical mechanical polishing of silicon carbide comprising surfaces
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United States of America Patent
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Oct 15, 2013
Grant Date -
Mar 22, 2012
app pub date -
Nov 28, 2011
filing date -
Apr 13, 2009
priority date (Note) -
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Abstract
Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ≦6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.
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