Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface
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United States of America Patent
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Oct 15, 2013
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app pub date -
May 7, 2007
filing date -
May 7, 2007
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Abstract
A spin tunneling element includes a pinned layer, a barrier layer, and a free layer. The free layer includes a ferromagnetic layer including a ferromagnetic material that adjoins the barrier layer at a first interface. The free layer also includes a layer of amorphous material that adjoins the ferromagnetic layer at a second interface opposite the first interface. A first crystallization temperature of the ferromagnetic material at the first interface is lower than a second crystallization temperature at the second interface.
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