Chemical mechanical polishing composition and methods relating thereto
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United States of America Patent
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Oct 22, 2013
Grant Date -
Aug 22, 2013
app pub date -
Apr 1, 2013
filing date -
Aug 4, 2008
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Abstract
A method for chemical mechanical polishing of a semiconductor wafer containing a nonferrous metal is provided, comprising: providing a chemical mechanical polishing composition comprising 1 to 25 wt % of an oxidizer; 0.01 to 15 wt % of an inhibitor for the nonferrous metal; 0.005 to 5 wt % of a copolymer of poly(ethylene glycol) methyl ether(meth)acrylate and 1-vinylimidazole; and water; wherein the chemical mechanical polishing composition has an acidic pH; providing a chemical mechanical polishing pad; providing a semiconductor wafer containing the nonferrous metal; creating dynamic contact between the chemical mechanical polishing pad and the semiconductor wafer; and, dispensing the polishing solution at or near the interface between the chemical mechanical polishing pad and the semiconductor wafer.
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