Predicting pattern critical dimensions in a lithographic exposure process
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United States of America Patent
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Oct 29, 2013
Grant Date -
Dec 27, 2012
app pub date -
Dec 7, 2011
filing date -
Jun 23, 2011
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Abstract
A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.
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