Method to form a 3D semiconductor device and structure

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United States of America Patent

PATENT NO 8574929
SERIAL NO

13678584

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Abstract

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A method to form a monolithic 3D device including: processing a first layer including first mono-crystal transistors; transferring a second mono-crystal layer on top of the first layer including first mono-crystal transistors by using ion-cut layer transfer; and repairing the damage caused by the ion-cut by using optical annealing.

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Patent Owner(s)

  • MONOLITHIC 3D INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cronquist, Brian San Jose, US 284 3809
Or-Bach, Zvi San Jose, US 534 17764
Sekar, Deepak San Jose, US 48 852

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