Semiconductor device
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United States of America Patent
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Nov 5, 2013
Grant Date -
Jul 14, 2011
app pub date -
Sep 1, 2009
filing date -
Sep 17, 2008
priority date (Note) -
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Abstract
A diode 201 includes a gate electrode 2, a gate insulating layer 5 provided on the gate electrode 2, at least one semiconductor layer 6, 7 provided on the gate insulating layer 5 and which includes a first region 6a and a second region 7b, a first electrode 10 which is provided on the first region 6a and which is electrically coupled to the first region 6a and the gate electrode 2, and a second electrode 12 which is provided on the second region 7b and which is electrically coupled to the second region 7b. The at least one semiconductor layer 6, 7 includes a channel region 6c which extends above the gate electrode 2 with the intervention of the gate insulating layer 5 therebetween, and a resistor region 7d which does not extend above the gate electrode 2. When the diode 201 is in an ON state, an electric current path is formed between the first electrode 10 and the second electrode 12, the electric current path including the channel region 6c and the resistor region 7d.
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