Method for determining leak rate through a bond line of a MEMS device
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United States of America Patent
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Nov 12, 2013
Grant Date -
Nov 10, 2011
app pub date -
Jul 19, 2011
filing date -
May 25, 2005
priority date (Note) -
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Abstract
A method for optimizing direct wafer bond line width for reduction of parasitic capacitance in a MEMS device by reducing the width of a bond line between a first and a second wafer, exposing the MEMS device to a water vapor for a predetermined time period and at a first temperature capable of evaporating water, cooling the MEMS device at a second temperature capable of freezing the water, and operating the MEMS device at a third temperature capable of freezing the water to determine if there is discontinuity during operation.
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