Method for the fast macropore etching in n-type silicon

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United States of America Patent

PATENT NO 8580102
APP PUB NO 20110294302A1
SERIAL NO

12921035

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Abstract

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Method for the electrochemical etching of macropores in n-type silicon wafers, using illumination of the wafer reverse sides and using an aqueous electrolyte, characterized in that the electrolyte is an aqueous acetic acid solution with the composition of H2O:CH3COOH in the range between 2:1 and 7:3, with an addition of at least 9 percent by weight hydrofluoric acid.

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Patent Owner(s)

Patent OwnerAddress
CHRISTIAN-ALBRECHTS-UNIVERSITAET ZU KIELCHRISTIAN-ALBRECHTS-PLATZ 4 KIEL 24118

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Carstensen, Juergen Kiel, DE 12 7
Cojocaru, Ala Kiel, DE 1 0
Foell, Helmut Moenkeberg, DE 13 135
Ossei-Wusu, Emmanuel Kiel, DE 3 2

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